Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits

Gennady I. Zebrev; Vasily V. Orlov; Maxim S. Gorbunov; Maxim G. Drosdetsky

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arXiv · 1704.07265

Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits

Gennady I. Zebrev·Vasily V. Orlov·Maxim S. Gorbunov·Maxim G. Drosdetsky

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Abstract

Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness parameters, dose-rate and annealing effects, and dependence on electric modes under irradiation. It was shown that proposed approach can be applied for description of dose dependent static leakage currents in complex FPGA circuits.

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Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov, Maxim G. Drosdetsky. 2017-04-24. Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits. https://arxiv.org/abs/1704.07265

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