Search arXivSearch

arXiv · 1704.07896

The Effects of Superheating Treatment on Distribution of Eutectic Silicon Particles in A357-Continuous Stainless Steel Composite

Abstract

In the present study, superheating treatment has been applied on A357 reinforced with 0.5 wt. % (Composite 1) and 1.0 wt.% (Composite 2) continuous stainless steel composite. In Composite 1 the microstructure displayed poor bonding between matrix and reinforcement interface. Poor bonding associated with large voids also can be seen in Composite 1. The results also showed that coarser eutectic silicon (Si) particles were less intensified around the matrix-reinforcement interface. From energy dispersive spectrometry (EDS) elemental mapping, it was clearly shown that the distribution of eutectic Si particles were less concentrated at poor bonding regions associated with large voids. Meanwhile in Composite 2, the microstructure displayed good bonding combined with more concentrated finer eutectic Si particles around the matrix-reinforcement interface. From EDS elemental mapping, it was clearly showed more concentrated of eutectic Si particles were distributed at the good bonding area. The superheating prior to casting has influenced the microstructure and tends to produce finer, rounded and preferred oriented α-Al dendritic structures.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Mazlee Mohd Noor, Shamsul Baharin Jamaludin. 2017-04-24. The Effects of Superheating Treatment on Distribution of Eutectic Silicon Particles in A357-Continuous Stainless Steel Composite. https://arxiv.org/abs/1704.07896

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph