Transition-Metal-Dichalcogenide Tunable Quantum Relay Device

Abstract

One of the biggest challenges in implementation of Quantum circuits or Photonic Integrated Circuits in general is the inability to create efficient relay devices due to small decoherence time, high delays and poor interconnections that worsen the decoherence and delay problems. A feasible relay device design is proposed that can work in conjunction with various sources, be highly tunable over a reasonably large bandwidth and operate with negligible switching delays. This is achieved with the help of the Transition Metal Dichalcogenide MoSe2 WSe2 heterojunction and a modulating chirped strain/acoustic wave is applied to control the operating frequency and other operational characteristics of the device. The chirping of strain wave is meant to control the exciton transport across the device. The switching delay is proposed to reduce by exploiting the exciton dynamics so that the carrier non-equilibrium is never disturbed and therefore no delay occurs while switching on or off. MoSe2 WSe2 heterojunction is chosen because of their binding energy nearly two orders greater than GaAs quantum wells because of which they demonstrate high exciton response which is electrically tunable even at room temperature. Also, it is possible to grow TMDC films on Si based substrates using particular techniques so that their properties are intact. Such a device can find applications in wide range of components in quantum optoelectronic integrated circuits such as switches, logic gates, sensors and buffers.