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arXiv · 1710.08600

Superconducting epitaxial YBa2Cu3O7-{\delta} on SrTiO3 buffered Si (001)

K. Ahmadi-Majlan·H. Zhang·X. Shen·M. J. Moghadam·M. Chrysler·P. Conlin·R. Hensley·D. Su·J. Y. T. Wei·J. H. Ngai
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Abstract

Thin films of optimally-doped (001)-oriented YBa2Cu3O7-{\delta} are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-{\delta} films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-{\delta} films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. The integration of single crystalline YBa2Cu3O7-{\delta} on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.

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K. Ahmadi-Majlan, H. Zhang, X. Shen, M. J. Moghadam, M. Chrysler, P. Conlin, R. Hensley, D. Su, J. Y. T. Wei, J. H. Ngai. 2017-10-24. Superconducting epitaxial YBa2Cu3O7-{\delta} on SrTiO3 buffered Si (001). https://arxiv.org/abs/1710.08600

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