Predicting the Spin Seebeck Voltage in Spin-polarized Materials: A Quantum Mechanical Transport Model Approach

Anveeksh Koneru; Terence D. Musho

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arXiv · 1712.04074

Predicting the Spin Seebeck Voltage in Spin-polarized Materials: A Quantum Mechanical Transport Model Approach

Anveeksh Koneru·Terence D. Musho

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Abstract

The spin Seebeck effect has recently been demonstrated as a viable method of direct energy conversion that has potential to outperform energy conversion from the conventional Seebeck effect. In this study, a computational transport model is developed and validated that predicts the spin Seebeck voltage in spin-polarized materials using material parameter obtain from first principle ground state density functional calculations. The transport model developed is based on a 1D effective mass description coupled with a microscopic inverse spin Hall relationship. The model can predict both the spin current and voltage generated in a non-magnetic material placed on top of a ferromagnetic material in a transverse spin Seebeck configuration. The model is validated and verified with available experimental data of La:YIG. Future applications of this model include the high-throughput exploration of new spin-based thermoelectric materials.

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BibTeX RIS

Anveeksh Koneru, Terence D. Musho. 2017-12-11. Predicting the Spin Seebeck Voltage in Spin-polarized Materials: A Quantum Mechanical Transport Model Approach. https://arxiv.org/abs/1712.04074

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