Search arXivSearch

arXiv · 1802.04261

Refractive-index-sensing radio-frequency comb with intracavity multi-mode interference fibre sensor

Abstract

Optical frequency combs have attracted attention as optical frequency rulers due to their tooth-like discrete spectra together with their inherent mode-locking nature and phase-locking control to a frequency standard. Based on this concept, their applications until now have been demonstrated in the fields of optical frequency metrology and optical distance metrology. However, if the utility of optical combs can be further expanded beyond their optical-frequency-ruler-based application by exploiting new aspects of optical combs, this will lead to new developments in optical metrology and instrumentation. Here, we report a fibre sensing application of optical combs based on a coherent frequency link between the optical and radio-frequency regions, enabling high-precision refractive index measurement of a liquid sample based on frequency measurement in radio-frequency region. Our technique encodes a refractive index change of a liquid sample into a radio-frequency comb by a combination of an intracavity multi-mode-interference fibre sensor and wavelength dispersion of a cavity fibre. Then, the change in refractive index is read out by measuring the repetition frequency of the radio-frequency comb with a frequency counter and a frequency standard. Use of an optical comb as a photonic radio-frequency converter will lead to the development of new applications in high-precision fibre sensing with the help of functional fibre sensors and precise radio-frequency measurement.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Roy Oe, Shuji Taue, Takeo Minamikawa, Kosuke Nagai, Yasuhiro Mizutani, Tetsuo Iwata, Hirotsugu Yamamoto, Hideki Fukano, Yoshiaki Nakajima, Kaoru Minoshima, Takeshi Yasui. 2018-02-12. Refractive-index-sensing radio-frequency comb with intracavity multi-mode interference fibre sensor. https://doi.org/10.1364/oe.26.019694

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph