Silicon Vibrating Wires at Low Temperatures

Abstract

Nowadays microfabrication techniques originating from micro-electronics enable to create mechanical objects of micron-size. The field of Micro-Electro-Mechanical devices (MEMS) is continuously expanding, with an amazingly broad range of applications at room temperature. Vibrating objects (torsional oscillators, vibrating wires) widely used at low temperatures to study quantum fluids, can be replaced advantageously by Silicon MEMS. In this letter we report on the study of Silicon vibrating wire devices. A goal-post structure covered with a metal layer is driven at resonance by the Laplace force acting on a current in a magnetic field, while the induced voltage arising from the cut magnetic flux allows to detect the motion. The characteristics of the resonance have been studied from 10 mK to 30 K, in vacuum and in $^4$He gas. In this article, we focus on the results obtained above 1.5 K, in vacuum and gas, and introduce some features observed at lower temperatures. The resonant properties can be quantitatively understood by means of simple models, from the linear regime to a highly non-linear response at strong drives. We demonstrate that the non-linearity is mostly due to the geometry of the vibrators. We also show that in our device the friction mechanisms originate in the metallic layers, and can be fully characterized. The interaction with $^4$He gas is fit to theory without adjustable parameters.