Search arXivSearch

arXiv · 1803.07028

Speckle characterization in a cinematography projection configuration

Abstract

Due to high exploitation costs and other environmental issues, it would be desirable to phase out large cinema projection systems based on standard xenon lamps in favor of laser based projection devices. Lasers provide longer lifetime and wider color gamut of light output. But the high degree of coherence of these sources also lead to the formation of granular structures, usually known as speckle. When an imaging system is involved, as in the cinema projection case because of the capacity of the human eye to form an image of the screen, we speak about subjective speckle. In order to remove this spatial random pattern, different methods have been studied as temporal and/or spatial coherence reduction. But most of them can't be used in the context of cinema projection because they don't respect the cinematography projection standard. In our work, we have studied the possibility to reduce the subjective speckle either by changing the coherence of the light source or by studying the influence of the different elements constituting the projection display in the conditions imposed by cinematography industry. Thanks to a lasers array formed by N independant semiconductor lasers, we have measured the evolution of the subjective speckle contrast in function of the number of sources. The resulting contrast discreases as a square root function and reach a saturation level when a light pipe is used. This behavior is directly due to the light pipe which limit at its output the spatial coherence of the source. Futhermore, in a different configuration, we have studied the influence of diffusers and the magnification of the projector zoom. It has been demonstrated that magnification plays an important role on the speckle formation because it increases the coherence length determined by the light pipe. On the contrary, the diffusers placed before the light pipe doesn't change the subjective speckle.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Pierre Walczak, Xavier Hachair, Stéphane Barland. 2018-03-19. Speckle characterization in a cinematography projection configuration. https://arxiv.org/abs/1803.07028

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph