arXiv · 1804.01101
Doped Twisted Bilayer Graphene near Magic Angles: Proximity to Wigner Crystallization not Mott Insulation
Abstract
We devise a model to explain why twisted bi-layer graphene (TBLG) exhibits insulating behavior when $ν=2,3$ charges occupy a unit moiré cell, a feature attributed to Mottness, but not for $ν=1$, clearly inconsistent with Mott insulation. We compute $r_s=E_U/E_K$, where $E_U$ and $E_K$ are the potential and kinetic energies, respectively, and show that (i) the Mott criterion lies at a density $10^4$ higher than in the experiments and (ii) a transition to a series of Wigner crystalline states exists as a function of $ν$. We find, for $ν=1$, $r_s$ fails to cross the threshold ($r_s = 37$) for the triangular lattice and metallic transport ensues. However, for $ν=2$ and $ν=3$, the thresholds, $r_s=22$, and $r_s=17$, respectively are satisfied for a transition to Wigner crystals (WCs) with a honeycomb ($ν=2$) and kagome ($ν=3$) structure. We believe, such crystalline states form the correct starting point for analyzing superconductivity.
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Bikash Padhi, Chandan Setty, Philip W. Phillips. 2018-08-28. Doped Twisted Bilayer Graphene near Magic Angles: Proximity to Wigner Crystallization not Mott Insulation. https://doi.org/10.1021/acs.nanolett.8b02033
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