Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing

Arnout Beckers; Farzan Jazaeri; Andrea Ruffino; Claudio Bruschini; Andrea Baschirotto; Christian Enz

doi:10.1109/essderc.2017.8066592

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arXiv · 1806.01142

Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing

Arnout Beckers·Farzan Jazaeri·Andrea Ruffino·Claudio Bruschini·Andrea Baschirotto·Christian Enz

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Abstract

This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300, 77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parameters. We find that the simplified charge-based EKV model can accurately predict the cryogenic behavior. This represents a main step towards the design of analog/RF circuits integrated in an advanced bulk CMOS process and operating at cryogenic temperature for quantum computing control systems.

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Arnout Beckers, Farzan Jazaeri, Andrea Ruffino, Claudio Bruschini, Andrea Baschirotto, Christian Enz. 2018-06-04. Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing. https://doi.org/10.1109/essderc.2017.8066592

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