Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

F. J. Iguaz; F. Balli; M. Barbero; S. Bhat; P. Breugnon; I. Caicedo; Z. Chen; Y. Degerli; S. Godiot; F. Guilloux; C. Guyot; T. Hemperek; T. Hirono; H. Krüger; J. P. Meyer; A. Ouraou; P. Pangaud; P. Rymaszewski; P. Schwemling; M. Vandenbroucke; T. Wang; N. Wermes

doi:10.1016/j.nima.2018.11.009

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arXiv · 1806.04400

Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

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Abstract

This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays).

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F. J. Iguaz, F. Balli, M. Barbero, S. Bhat, P. Breugnon, I. Caicedo, Z. Chen, Y. Degerli, S. Godiot, F. Guilloux, C. Guyot, T. Hemperek, T. Hirono, H. Krüger, J. P. Meyer, A. Ouraou, P. Pangaud, P. Rymaszewski, P. Schwemling, M. Vandenbroucke, T. Wang, N. Wermes. 2018-06-12. Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade. https://doi.org/10.1016/j.nima.2018.11.009

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