Search arXivSearch

arXiv · 1806.09438

Pulsed Self-Oscillating Nonlinear Systems for Robust Wireless Power Transfer

Abstract

While wired-power-transfer devices ensure robust power delivery even if the receiver position or load impedance changes, achieving the robustness of wireless power transfer (WPT) is challenging. Conventional solutions are based on additional control circuits for dynamic tuning. Here, we propose a robust WPT system in which no additional tuning circuitry is required for robust operation. This is achieved by our systematically designing the load and the coupling link to be parts of the feedback circuit. Therefore, the WPT operation is automatically adjusted to the optimal working condition under a wide range of load and receiver positions. In addition, pulsed oscillations instead of single-harmonic oscillation are adopted to increase the overall efficiency. An example system is designed with the use of a capacitive coupling link. It realizes a virtual, nearly-ideal oscillating voltage source at the load site, giving efficient power transfer comparable to that of the ideal wired-connection scenario. We numerically and experimentally verify the robustness of the WPT system under the variations of load and coupling, where coupling is changing by our varying the alignment of aluminum plates. The working frequency and the transferred power agree well with analytical models. The proposed paradigm can have a significant impact on future high-performance WPT devices. The designed system can also work as a smart table supporting multiple receivers with robust and efficient operation.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Fu Liu, Bhakti Chowkwale, Prasad Jayathurathnage, Sergei Tretyakov. 2020-01-08. Pulsed Self-Oscillating Nonlinear Systems for Robust Wireless Power Transfer. https://doi.org/10.1103/physrevapplied.12.054040

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph