Design of nano-scale high static performance phase-change on-off silicon photonic switch

Abstract

We report design of a high static performance on-off optical switch using nanoscale phase change material Ge2Sb2Te5 embedded into silicon-on-insulator waveguide. This active material can be switched between amorphous and crystalline states using electrical/optical pulses. The fundamental mode propagating through Silicon waveguide drastically alters its properties due to high index change at Si-Ge2Sb2Te5 interfaces and absorption in Ge2Sb2Te5. The optical switch made of Silicon waveguide with Ge2Sb2Te5 of volume 400 nm x 180 nm x 450 nm (length x height x width) embedded in to it, provides high extinction ratio of 43 dB with low insertion loss of 2.76 dB in ON state at communication wavelength of 1550 nm. There is trade-off between insertion loss and extinction ratio. For 10 dB extinction ratio, The insertion loss can be as low as 1.2 dB and corresponding active volume is also pretty low (100 nm x 150 nm x 450 nm (length x height x width)). Further, spectral response investigations reveal that this switch maintains extinction ratio more than 30 dB in wavelength span 1500-1600 nm. The high static performance of optical switch reported here is a direct result of proper dimensional engineering of active volume as well as its incorporation into the silicon-on-insulator waveguide. We also propose figure-of merit for non volatile optical switches that takes into account relevant parameters of static performance.