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arXiv · 1807.10285

High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon

M. A. Broome·T. F. Watson·D. Keith·S. K. Gorman·M. G. House·J. G. Keizer·S. J. Hile·W. Baker·M. Y. Simmons
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Abstract

In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to be of the order 3s at 2.5T and observe its predicted decrease as a function of magnetic field, reaching 0.5s at 1T.

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M. A. Broome, T. F. Watson, D. Keith, S. K. Gorman, M. G. House, J. G. Keizer, S. J. Hile, W. Baker, M. Y. Simmons. 2018-07-26. High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon. https://doi.org/10.1103/physrevlett.119.046802

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