arXiv · 1808.05775
Characterisation of silicon photomultipliers based on statistical analysis of pulse-shape and time distributions
Abstract
A detailed and accurate characterisation of silicon photomultiplier detectors is required for a better understanding of the signal and noise in many applications. The collected information is a valuable feedback to the manufacturers in their attempt to improve the performances. In this paper, we provide a detailed description of how to characterise these photo-detectors. The correlated noise probabilities, the important time constants and the photon detection efficiency are obtained with a statistical analysis of pulse-shape and time distributions. The method is tested with different detectors. The quench resistor, the breakdown voltage and the dark count rate are measured from IV characteristics.
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Olivier Girard, Guido Haefeli, Axel Kuonen, Luca Pescatore, Olivier Schneider, Maria Elena Stramaglia. 2018-08-17. Characterisation of silicon photomultipliers based on statistical analysis of pulse-shape and time distributions. https://arxiv.org/abs/1808.05775
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