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arXiv · 1808.07934

Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch

Daniil Frolov·Greg Saewert
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Abstract

A broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors by means of microwave photonics techniques. These four transistors are arranged into a high voltage and high repetition rate switch. Using multiple transistors in series is required to share switching losses. Using a photonic signal distribution system is required to achieve precise synchronization between transistors. We demonstrate 600 V arbitrary pulse generation into a 200 Ohm load with 2 ns rise/fall time. The arbitrary pulse widths can be adjusted from 4 ns to essentially DC.

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Daniil Frolov, Greg Saewert. 2018-08-23. Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch. https://arxiv.org/abs/1808.07934

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