Diameter Optimization for Highest Degree of Ballisticity of Carbon Nanotube Field Effect Transistors

Imtiaj Khan; Ovishek Morshed; Sharif Mohammad Mominuzzaman

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arXiv · 1811.07316

Diameter Optimization for Highest Degree of Ballisticity of Carbon Nanotube Field Effect Transistors

Imtiaj Khan·Ovishek Morshed·Sharif Mohammad Mominuzzaman

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Abstract

Carbon Nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nano-scaled transistors. This paper aims at analyzing a trade-off between device performance and device size of CNT based transistor. Acoustic and Optical Phonon scattering along with the elastic scattering lead to the non-ballistic performances of those transistors. The main focus of this work is mainly on finding an optimum diameter to obtain the highest degree of ballisticity from both single-walled and double-walled Carbon Nanotube Field Effect Transistors (CNT-FETs). At first, an n-type single-walled Carbon Nanotube Field Effect Transistor has been considered and the diameter dependence on degree of ballisticity has been simulated. The effects of drain voltage, gate voltage and channel length have been investigated for such characteristics followed by a comparison with double-walled CNT-FET structure. First of all, it has been found that degree of ballisticity along with the optimum diameter increases with the increase of (VDS VGS). The increase of channel length, however, degrades the ballistic performance demanding a higher diameter to reach the optimum point. Finally, it can be concluded that optimum diameter for DWCNT-FET reaches earlier than SWCNT-FET but at lower degree of ballisticity.

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Imtiaj Khan, Ovishek Morshed, Sharif Mohammad Mominuzzaman. 2018-11-18. Diameter Optimization for Highest Degree of Ballisticity of Carbon Nanotube Field Effect Transistors. https://arxiv.org/abs/1811.07316

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