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arXiv · 1902.03742

Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb

Shoya Sakamoto·Le Duc Anh·Pham Nam Hai·Yukiharu Takeda·Masaki Kobayashi·Yuki K. Wakabayashi·Yosuke Nonaka·Keisuke Ikeda·Zhendong Chi·Yuxuan Wan·Masahiro Suzuki·Yuji Saitoh·Hiroshi Yamagami·Masaaki Tanaka·Atsushi Fujimori
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Abstract

We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.

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Shoya Sakamoto, Le Duc Anh, Pham Nam Hai, Yukiharu Takeda, Masaki Kobayashi, Yuki K. Wakabayashi, Yosuke Nonaka, Keisuke Ikeda, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori. 2019-02-11. Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb. https://doi.org/10.1103/physrevb.101.075204

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