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arXiv · 1903.08691

Tunable MEMS VCSEL on Silicon substrate

Hitesh Kumar Sahoo·Thor Ansbæk·Luisa Ottaviano·Elizaveta Semenova·Fyodor Zubov·Ole Hansen·Kresten Yvind
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Abstract

We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS element. The MEMS VCSEL device uses a high contrast grating mirror on a MEMS stage as the bottom mirror, a wafer bonded InP with quantum wells for amplification and a deposited dielectric DBR as the top mirror. A 40 nm tuning range and a mechanical resonance frequency in excess of 2 MHz are demonstrated.

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Hitesh Kumar Sahoo, Thor Ansbæk, Luisa Ottaviano, Elizaveta Semenova, Fyodor Zubov, Ole Hansen, Kresten Yvind. 2019-03-20. Tunable MEMS VCSEL on Silicon substrate. https://arxiv.org/abs/1903.08691

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