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arXiv · 1904.03101

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Farsane Tabataba-Vakili·Stéphanie Rennesson·Benjamin Damilano·Eric Frayssinet·Jean-Yves Duboz·Fabrice Semond·Iannis Roland·Bruno Paulillo·Raffaele Colombelli·Moustafa El Kurdi·Xavier Checoury·Sébastien Sauvage·Laetitia Doyennette·Christelle Brimont·Thierry Guillet·Bruno Gayral·Philippe Boucaud
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Abstract

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm$^2$ output power density at 20 mA from such microrings with diameters of 30 to 50 $μ$m. The first steps towards achieving an integrated photonic circuit are demonstrated.

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Farsane Tabataba-Vakili, Stéphanie Rennesson, Benjamin Damilano, Eric Frayssinet, Jean-Yves Duboz, Fabrice Semond, Iannis Roland, Bruno Paulillo, Raffaele Colombelli, Moustafa El Kurdi, Xavier Checoury, Sébastien Sauvage, Laetitia Doyennette, Christelle Brimont, Thierry Guillet, Bruno Gayral, Philippe Boucaud. 2019-04-05. III-nitride on silicon electrically injected microrings for nanophotonic circuits. https://doi.org/10.1364/oe.27.011800

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