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arXiv · 1906.08224

Phonon scattering induced carrier resistivity in twisted double bilayer graphene

Xiao Li·Fengcheng Wu·S. Das Sarma
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Abstract

In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle $\theta$. We show that at small twist angles ($\theta\sim 1^\circ$) the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconductivity in such a system, and provide an order of magnitude estimation of the superconducting transition temperature.

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Xiao Li, Fengcheng Wu, S. Das Sarma. 2019-06-19. Phonon scattering induced carrier resistivity in twisted double bilayer graphene. https://doi.org/10.1103/physrevb.101.245436

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