Search arXivSearch

arXiv · 1907.03239

Deep learning-based quality filtering of mechanically exfoliated 2D crystals

Abstract

Two-dimensional (2D) crystals are attracting growing interest in various research fields such as engineering, physics, chemistry, pharmacy and biology owing to their low dimensionality and dramatic change of properties compared to the bulk counterparts. Among the various techniques used to manufacture 2D crystals, mechanical exfoliation has been essential to practical applications and fundamental research. However, mechanically exfoliated crystals on substrates contain relatively thick flakes that must be found and removed manually, limiting high-throughput manufacturing of atomic 2D crystals and van der Waals heterostructures. Here we present a deep learning-based method to segment and identify the thickness of atomic layer flakes from optical microscopy images. Through carefully designing a neural network based on U-Net, we found that our neural network based on U-net trained only with the data based on 24 images successfully distinguish monolayer and bilayer MoS2 with a success rate of 70%, which is a practical value in the first screening process for choosing monolayer and bilayer flakes of MoS2 of all flakes on substrates without human eye. The remarkable results highlight the possibility that a large fraction of manual laboratory work can be replaced by AI-based systems, boosting productivity.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Yu Saito, Kento Shin, Kei Terayama1, Shaan Desai, Masaru Onga, Yuji Nakagawa, Yuki M. Itahashi, Yoshihiro Iwasa, Makoto Yamada, Koji Tsuda. 2019-07-07. Deep learning-based quality filtering of mechanically exfoliated 2D crystals. https://arxiv.org/abs/1907.03239

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph