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arXiv · 1907.09592

Few-Layer MoS$_2$/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection

Andreas Bablich·Daniel S. Schneider·Paul Kienitz·Satender Kataria·Stefan Wagner·Chanyoung Yim·Niall McEvoy·Olof Engstrom·Julian Müller·Yilmaz Sakalli·Benjamin Butz·Georg S. Duesberg·Peter Haring Bolívar·Max C. Lemme
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Abstract

Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS$_2$. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin photodetectors in the infrared range (IR, $\lambda$ = 2120 nm) in terms of sensitivities by up to 50 mAW$^{-1}$. Photodetectivities of up to 2 x 10$^{10}$ Jones and external quantum efficiencies of 3 % are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step towards pixelated and wavelength-selective sensors operating in the IR spectral range.

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Andreas Bablich, Daniel S. Schneider, Paul Kienitz, Satender Kataria, Stefan Wagner, Chanyoung Yim, Niall McEvoy, Olof Engstrom, Julian Müller, Yilmaz Sakalli, Benjamin Butz, Georg S. Duesberg, Peter Haring Bolívar, Max C. Lemme. 2019-07-22. Few-Layer MoS$_2$/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection. https://doi.org/10.1021/acsphotonics.9b00337

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