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arXiv · 1909.11209

Vertical transport and tunnelling in rare-earth nitride heterostructures

Jackson D. Miller·Felicia H. Ullstad·H. Joe Trodahl·Ben. J. Ruck·Franck Natali
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Abstract

We report an investigation of the ferromagnetic semiconductor rare earth nitrides (RENs) for their potential for cryogenic-temperature electronics and spintronics application. We have indentified ohmic contacts suitable for the device structures that demand electron transport through interface layers, and grown REN/insulator/REN heterostructures that display tunnelling characteristics, an enormous 400% tunneling magnetoresistance and a hysteresis promising their exploitation in non-volatile magnetic random access memory.

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Jackson D. Miller, Felicia H. Ullstad, H. Joe Trodahl, Ben. J. Ruck, Franck Natali. 2019-09-24. Vertical transport and tunnelling in rare-earth nitride heterostructures. https://doi.org/10.1088/1361-6528/ab7886

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