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arXiv · 1909.13438

Fermi level tuning of one-dimensional giant Rashba system on a semiconductor substrate: Bi/GaSb(110)-(2x1)

Takuto Nakamura·Yoshiyuki Ohtsubo·Naoki Tokumasu·Patrick Le Fèvre·François Bertran·Shin-ichiro Ideta·Kiyohisa Tanaka·Kenta Kuroda·Koichiro Yaji·Ayumi Harasawa·Shik Shin·Fumio Komori·Shin-ichi Kimura
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Abstract

We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $\alpha _{\rm R}$ of 4.1 and 2.6 eV\AA \ at the $\bar{\Gamma}$ and $\bar{\rm Y}$ points of the surface Brillouin zone, respectively. The Fermi level of the surface electronic state is tuned in situ by element-selective Ar-ion sputtering on the GaSb substrate. The giant Rashba-type spin splitting with switchable metallic/semiconducting character on semiconductor substrate makes this system a promising candidate for future researches in low-dimensional spintronic phenomena.

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Takuto Nakamura, Yoshiyuki Ohtsubo, Naoki Tokumasu, Patrick Le Fèvre, François Bertran, Shin-ichiro Ideta, Kiyohisa Tanaka, Kenta Kuroda, Koichiro Yaji, Ayumi Harasawa, Shik Shin, Fumio Komori, Shin-ichi Kimura. 2019-09-30. Fermi level tuning of one-dimensional giant Rashba system on a semiconductor substrate: Bi/GaSb(110)-(2x1). https://doi.org/10.1103/physrevmaterials.3.126001

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