Search arXivSearch

arXiv · 1912.06189

Validating the Critical Point of Spontaneous Parametric Down-Conversion for over 600 Scanning MEMS Micro Mirrors on Wafer-Level

Abstract

Sensors and actuators based on resonant micro-electro-mechanical systems (MEMS), such as scanning micro mirrors, are well-established in automotive and consumer products. As the areas of application broaden, the requirements for the MEMS are increasing. Devices outside of the performance specifications have to be rejected which is costly due to the high processing times of MEMS technologies. In particular, nonlinear system behavior is often found to cause unexpected device failure or performance issues. Thus, accurate simulation or rather system models which account for nonlinear sensor dynamics can not only increase process yield, but more importantly, lead to a comprehensive understanding of the underlying physics and to improved MEMS design. We have studied [1] the possibility of a rather drastic device failure induced by nonlinearities on the example of a resonant scanning MEMS micro mirror. On the level of a few selected chips, we have carefully measured the complex nonlinear system behavior and modeled it by a nonlinear mode-coupling phenomenon known as spontaneous parametric down-conversion (SPDC). The most intriguing feature of SPDC is the sudden change from a rather linear to a nonlinear system behavior at the critical oscillation amplitude. However, the threshold only lies within the range of the mirror's operational amplitude, if certain frequency resonance conditions regarding the mechanical modes are met. Thus, the critical amplitude strongly depends on the frequency spectrum of the MEMS design which in turn is largely influenced by fabrication imperfections. We validate the dependence of the critical amplitude on the resonance condition by measuring it for over 600 micro mirrors on wafer-level. Our work does not only validate the theory of SPDC with measurements on such a large scale, but also demonstrates modeling strategies which are essential for MEMS product design.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Ulrike Nabholz, Florian Stockmar, Jan E. Mehner, Peter Degenfeld-Schonburg. 2020-02-06. Validating the Critical Point of Spontaneous Parametric Down-Conversion for over 600 Scanning MEMS Micro Mirrors on Wafer-Level. https://doi.org/10.1109/lsens.2020.2964384

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

RCS angular control with gradient metasurfaces: design and measurement

This letter proposes the design and measurement of a periodic metasurface that achieves anomalous reflection with reduced RCS in a given parasitic direction. A previous study proposed a semi-analytical model to predict the RCS behavior of such a metasurface. However, this first study did not include any experimental exploration to verify the theoretical results. To complete this study, this work presents an experimental validation of the proposed design, with a focus on manufacturing and measurement issues. The synthesis, design specifications, fabrication method and experimental setup are presented and discussed. Measurement results are also examined in detail, highlighting some limitations in metasurfaces RCS measurements. The proposed metasurface effectively achieves the predicted RCS level reduction in the considered parasitic direction. The agreement between simulation and experimental results demonstrates the accuracy of the modelling and the efficiency of the optimisation procedure.

physics.app-ph

Maximum-Power-Transfer Power Coordinates for Fully Coupled Multiport Thévenin Sources

A power-normalized scattering representation is developed at a fixed frequency for a passive linear time-invariant multiport load driven by a fully coupled multiport Thévenin source. The source is obtained by reducing, at the load reference planes, an independent-source network whose suppressed internal impedance is passive, together with an intervening passive matching network. No diagonal-reference, uncoupled-source-channel, reciprocity, or commutation assumption is required. With $R_s=\mathrm{Herm}\{Z_s\}\succ\mathbf{0}$, completing the square in accepted power identifies the available-power current and motivates the coordinates $\mathbf{a}=\frac12R_s^{-1/2}(\mathbf{V}+Z_s\mathbf{I})$, $\mathbf{b}=\frac12R_s^{-1/2}(\mathbf{V}-Z_s^H\mathbf{I})$. They satisfy $\|\mathbf{a}\|_2^2-\|\mathbf{b}\|_2^2=\Re\{\mathbf{I}^H\mathbf{V}\}$ and yield $\mathbf{S}=R_s^{-1/2}(Z_{load}-Z_s^H)(Z_{load}+Z_s)^{-1}R_s^{1/2}$. An exact operator identity establishes passivity--contractivity equivalence and gives excitation-specific, reachable-subspace, and complete conjugate-matching conditions. On the physically reachable incident subspace, singular values characterize the best- and worst-case source-normalized port-reflection TARC, while a restricted Frobenius norm gives the basis-averaged squared TARC. Equal-magnitude phase-only control is formulated separately as a constant-modulus problem, with generator-side constraints mapped through the coupled source network before power normalization. For antenna loads and excitations with $P_{acc}>0$, $P_{rad}/P_{av}=η_{rad}(1-\mathrm{TARC}^2)$, so terminal scattering data alone do not determine radiation efficiency. When $R_s$ is singular, finite available power exists exactly for $\mathbf{E}\in\mathrm{range}(R_s)$, and the construction applies on the positive-resistance support.

physics.app-ph

Bimorph Lithium Niobate Thickness-Shear Overtone Film Bulk Acoustic Resonator

High quality factor ($Q$) and overtone operation enable narrow-linewidth acoustic devices with multiple discrete frequencies in a single cavity. Maintaining both high $Q$ and sufficient electromechanical coupling at higher mode orders remains challenging. Here, we demonstrate a bimorph periodically poled piezoelectric film (P3F) lithium niobate (LN) platform for high-order thickness-shear (TS) overtone excitation. The device comprises a bonded 80-$μ$m-thick single-crystal X-cut LN bimorph with opposite polarizations, patterned top and floating bottom electrodes, and a suspended air cavity. The P3F configuration mitigates charge cancellation from the alternating stress distribution of higher-order TS modes, enabling measurable coupling across a broad sequence of overtones. The thick LN acoustic cavity and increasingly confined high-order mode profiles support low-loss operation. Measured TS overtones extend to 1.75 GHz. At room temperature, representative overtones at 0.77 and 0.89 GHz exhibit 3-dB $Q$ values of 11,338 and 11,917, corresponding to $fQ$ products of $8.74\times10^{12}$ and $1.06\times10^{13}$ Hz, respectively. Cooling from 297 to 12 K systematically enhances $Q$, yielding a peak 3-dB $Q$ of 20,507 at 779 MHz and a maximum $fQ$ product of $1.98\times10^{13}$ Hz at 1.379 GHz. These results establish bimorph P3F LN as a promising platform for high-$Q$, frequency-scalable micro-acoustic resonators in the sub-GHz and low-GHz regimes.

physics.app-ph