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arXiv · 2003.11050

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Jingdi Lu·Liang Si·Xiefei Yao·Chengfeng Tian·Jing Wang·Qinghua Zhang·Zhengxun Lai·Iftikhar Ahmed Malik·Xin Liu·Peiheng Jiang·Kejia Zhu·Youguo Shi·Zhenlin Luo·Lin Gu·Karsten Held·Wenbo Mi·Zhicheng Zhong·Ce-Wen Nan·Jinxing Zhang
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Abstract

Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.

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Jingdi Lu, Liang Si, Xiefei Yao, Chengfeng Tian, Jing Wang, Qinghua Zhang, Zhengxun Lai, Iftikhar Ahmed Malik, Xin Liu, Peiheng Jiang, Kejia Zhu, Youguo Shi, Zhenlin Luo, Lin Gu, Karsten Held, Wenbo Mi, Zhicheng Zhong, Ce-Wen Nan, Jinxing Zhang. 2020-03-24. Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction. https://doi.org/10.1103/physrevb.101.214401

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