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arXiv · 2003.13546

CMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration

Z. He·B. Chen·Y. Hua·Z. Liu·Y. Wei·S. Liu·A. Hu·X. Shen·Y. Zhang·Y. Gao·J. Liu
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Abstract

Coherent light sources in silicon photonics are the long-sought holy grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain engineering and nonlinear process, are technologically demanding. Here, we demonstrate a hybrid lasing device composing of perovskite nanocrystals and silicon nitride nanobeam cavity. We fabricate SiN photonic crystal naonobeam cavities on a solid substrate with significantly improved thermal and mechanical stabilities compared to conventional suspended ones. In addition, adding a PMMA-encapsulation layer on top of the SiN can significantly boost the Q-factor of the cavity mode. By dispersing perovskite nanocrystals as emitters in the PMMA layer, we obtained high-performance coherent emissions in terms of lasing threshold, linewidth and mode volumes. Our work offers a compelling way of creating solution-processed active integrated photonic devices based on the mature platform of silicon photonics for applications in optical information science and photonic quantum technology.

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Z. He, B. Chen, Y. Hua, Z. Liu, Y. Wei, S. Liu, A. Hu, X. Shen, Y. Zhang, Y. Gao, J. Liu. 2020-03-30. CMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration. https://arxiv.org/abs/2003.13546

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