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arXiv · 2004.00983

High-Speed Femto-Joule per Bit Silicon-Conductive Oxide Nanocavity Modulator

Erwen Li·Bokun Zhou·Yunfei Bo·Alan X. Wang
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Abstract

By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can potentially achieve unprecedented energy efficiency to atto-joule per bit. In this article, we report the first high-speed silicon nanocavity modulator driven by an ITO gate, achieving 2.2 GHz bandwidth. On-off-key modulation is measured up to 5 Gb/s with only 2 V voltage swing and 18.3 fJ/bit energy efficiency. In addition, we perform in-depth analysis of the energy efficiency and high frequency simulation of the nanocavity modulator, revealing the critical role played by the semiconductor conduction path and the overlapping factor between the accumulated free carriers and the cavity resonant mode. Based on our analysis, we propose a strategy to further improve the modulation bandwidth to 23.5 GHz by node-matched doping and reduce the energy consumption to the range of hundreds of atto-joule per bit.

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Erwen Li, Bokun Zhou, Yunfei Bo, Alan X. Wang. 2020-03-03. High-Speed Femto-Joule per Bit Silicon-Conductive Oxide Nanocavity Modulator. https://doi.org/10.1109/jlt.2020.3023644

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