Search arXivSearch

arXiv · 2004.11050

Topological and non-topological features of generalized Su-Schrieffer-Heeger models

Abstract

The (one-dimensional) Su-Schrieffer-Heeger Hamiltonian, augmented by spin-orbit coupling and longer-range hopping, is studied at half filling for an even number of sites. The ground-state phase diagram depends sensitively on the symmetry of the model. Charge-conjugation (particle-hole) symmetry is conserved if hopping is only allowed between the two sublattices of even and odd sites. In this case (of BDI symmetry) we find a variety of topologically non-trivial phases, characterized by different numbers of edge states (or, equivalently, different quantized Zak phases). The transitions between these phases are clearly signalled by the entanglement entropy. Charge-conjugation symmetry is broken if hopping within the sublattices is admitted (driving the system into the AI symmetry class). We study specifically next-nearest-neighbor hopping with amplitudes $t_a$ and $t_b$ for the $A$ and $B$ sublattices, respectively. For $t_a=t_b$ parity is conserved, and also the quantized Zak phases remain unchanged in the gapped regions of the phase diagram. However, metallic patches appear due to the overlap between conduction and valence bands in some regions of parameter space. The case of alternating next-nearest neighbor hopping, $t_a=-t_b$, is also remarkable, as it breaks both charge-conjugation $C$ and parity $P$ but conserves the product $CP$. Both the Zak phase and the entanglement spectrum still provide relevant information, in particular about the broken parity. Thus the Zak phase for small values of $t_a$ measures the disparity between bond strengths on $A$ and $B$ sublattices, in close analogy to the proportionality between the Zak phase and the polarization in the case of the related Aubry-Andr\'e model.

Explore related subjects

Keep this discovery

BibTeXRIS

N. Ahmadi, J. Abouie, D. Baeriswyl. 2020-04-23. Topological and non-topological features of generalized Su-Schrieffer-Heeger models. https://doi.org/10.1103/physrevb.101.195117

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall