Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides

Jens H. Schmid; Mohamed Rahim; Grzegorz Pakulski; Martin Vachon; Siegfried Janz; Pavel Cheben; Dan-Xia Xu; Philip J. Poole; Pedro Barrios; Weihong Jiang; Jean Lapointe; Daniele Melati

arXiv · 2005.00335

Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides

Jens H. Schmid·Mohamed Rahim·Grzegorz Pakulski·Martin Vachon·Siegfried Janz·Pavel Cheben·Dan-Xia Xu·Philip J. Poole·Pedro Barrios·Weihong Jiang·Jean Lapointe·Daniele Melati

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Abstract

An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth.

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Jens H. Schmid, Mohamed Rahim, Grzegorz Pakulski, Martin Vachon, Siegfried Janz, Pavel Cheben, Dan-Xia Xu, Philip J. Poole, Pedro Barrios, Weihong Jiang, Jean Lapointe, Daniele Melati. 2020-03-30. Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides. https://arxiv.org/abs/2005.00335

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