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arXiv · 2005.13348

Thermo-Optic Properties of Silicon-Rich Silicon Nitride for On-chip Applications

Hani Nejadriahi·Alex Friedman·Rajat Sharma·Steve Pappert·Yeshaiahu Fainman·Paul Yu
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Abstract

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder Interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65+/-0.08) x 10-4 K-1. Furthermore, we realize an SRN Multi-Mode Interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.

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Hani Nejadriahi, Alex Friedman, Rajat Sharma, Steve Pappert, Yeshaiahu Fainman, Paul Yu. 2020-05-09. Thermo-Optic Properties of Silicon-Rich Silicon Nitride for On-chip Applications. https://doi.org/10.1364/oe.396969

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