2D-subband spectra variations under persistent tunneling photoconductivity condition in tunnel delta-GaAs/Al structures

S. E. Dizhur; I. N. Kotel'nikov; V. A. Kokin; F. V. Shtrom

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arXiv · 2008.11471

2D-subband spectra variations under persistent tunneling photoconductivity condition in tunnel delta-GaAs/Al structures

S. E. Dizhur·I. N. Kotel'nikov·V. A. Kokin·F. V. Shtrom

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Abstract

2DEG states of Al/$δ$-GaAs structures were investigated in the persistent tunneling photoconductivity (PTPC) regime at low temperatures. "Thickening" of the unoccupied subbands to the ground state of 2DEG was observed at $T=4.2$~$K$. It was found that there is a uniform shift of the subband levels at $T=77$~$K$. The behavior of the persistent 2D states in tunneling spectra after various illumination and at different temperatures allows us to assume that there are two PTPC mechanisms, namely, the broadening of the potential well profile of the $δ$-layer and photoionization of the DX-centers.

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S. E. Dizhur, I. N. Kotel'nikov, V. A. Kokin, F. V. Shtrom. 2020-08-26. 2D-subband spectra variations under persistent tunneling photoconductivity condition in tunnel delta-GaAs/Al structures. https://arxiv.org/abs/2008.11471

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