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arXiv · 2009.01768

Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates

Michael A. Mastro·Joshua D. Caldwell·Ron T. Holm·Rich L. Henry·Charles R. Eddy Jr
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Abstract

A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to eight times for a flip-chip design

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Michael A. Mastro, Joshua D. Caldwell, Ron T. Holm, Rich L. Henry, Charles R. Eddy Jr. 2020-09-02. Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates. https://doi.org/10.1002/adma.20070710

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