Doping profile engineered triple heterojunction TFETs with 12 nm body thickness

Chin-Yi Chen; Hsin-Ying Tseng; Hesameddin Ilatikhameneh; Tarek A. Ameen; Gerhard Klimeck; Mark J. Rodwell; Michael Povolotskyi

doi:10.1109/ted.2021.3075190

arXiv · 2010.12964

Doping profile engineered triple heterojunction TFETs with 12 nm body thickness

Chin-Yi Chen·Hsin-Ying Tseng·Hesameddin Ilatikhameneh·Tarek A. Ameen·Gerhard Klimeck·Mark J. Rodwell·Michael Povolotskyi

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Abstract

Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces. This work shows that the original THJ-TFET design with 12 nm body thickness has poor performance, because its sub-threshold swing is 50 mV/dec and the ON-current is only 6 $μA/μm$. To improve the performance, the doping profile of THJ-TFET is engineered to boost the resonant tunneling efficiency. The proposed THJ-TFET design shows a sub-threshold swing of 40 mV/dec over four orders of drain current and an ON-current of 325 uA/um with VGS = 0.3 V. Since THJ-TFETs have multiple quantum wells and material interfaces in the tunneling junction, quantum transport simulations in such devices are complicated. State-of-the-art mode-space quantum transport simulation, including the effect of thermalization and scattering, is employed in this work to optimize THJ-TFET design.

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Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck, Mark J. Rodwell, Michael Povolotskyi. 2020-10-24. Doping profile engineered triple heterojunction TFETs with 12 nm body thickness. https://doi.org/10.1109/ted.2021.3075190

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