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arXiv · 2011.13907

Roadmap for gallium arsenide spin qubits

Ferdinand Kuemmeth·Hendrik Bluhm
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Abstract

Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments.

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Ferdinand Kuemmeth, Hendrik Bluhm. 2020-11-27. Roadmap for gallium arsenide spin qubits. https://doi.org/10.1088/1361-6528/abb333

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