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arXiv · 2012.15588

Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Rami Ezzouch·Simon Zihlmann·Vincent P. Michal·Jing Li·Agostino Aprá·Benoit Bertrand·Louis Hutin·Maud Vinet·Matias Urdampilleta·Tristan Meunier·Xavier Jehl·Yann-Michel Niquet·Marc Sanquer·Silvano De Franceschi·Romain Maurand
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Abstract

Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation.

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Rami Ezzouch, Simon Zihlmann, Vincent P. Michal, Jing Li, Agostino Aprá, Benoit Bertrand, Louis Hutin, Maud Vinet, Matias Urdampilleta, Tristan Meunier, Xavier Jehl, Yann-Michel Niquet, Marc Sanquer, Silvano De Franceschi, Romain Maurand. 2020-12-31. Dispersively probed microwave spectroscopy of a silicon hole double quantum dot. https://doi.org/10.1103/physrevapplied.16.034031

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