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arXiv · 2101.00869

TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

P. Zhao·J. -P. Likforman·H. Y. Li·J. Tao·T. Henner·Y. D. Lim·W. W. Seit·C. S. Tan·Luca Guidoni
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Abstract

In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.

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P. Zhao, J. -P. Likforman, H. Y. Li, J. Tao, T. Henner, Y. D. Lim, W. W. Seit, C. S. Tan, Luca Guidoni. 2021-01-04. TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing. https://doi.org/10.1063/5.0042531

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