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arXiv · 2102.04928

Quasi-quantized Hall response in bulk InAs

Rafał Wawrzyńczak·Stanislaw Galeski·Jonathan Noky·Yan Sun·Claudia Felser·Johannes Gooth
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Abstract

The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE),exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials, consisting of stacks of weakly coupled 2D platelets that are yet characterized by a 3D anisotropic Fermi surface. However, it is predicted that the quasi-quantized 3D version of the 2D QHE should occur in a much broader class of bulk materials, regardless of the underlying crystal structure. Here, we compare the observation of quasi-quantized plateau-like features in the Hall conductivity of then-type bulk semiconductor InAs with the predictions for the 3D QQHE in presence of parabolic electron bands. InAs takes form of a cubic crystal without any low-dimensional substructure. The onset of the plateau-like feature in the Hall conductivity scales with $\sqrt{2/3}k_{F}^{z}/π$ in units of the conductance quantum and is accompanied by a Shubnikov-de Haas minimum in the longitudinal resistivity, consistent wit the results of calculations. This confirms the suggestion that the 3D QQHE may be a generic effect directly observable in materials with small Fermi surfaces, placed in sufficiently strong magnetic fields

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Rafał Wawrzyńczak, Stanislaw Galeski, Jonathan Noky, Yan Sun, Claudia Felser, Johannes Gooth. 2021-09-15. Quasi-quantized Hall response in bulk InAs. https://doi.org/10.1038/s41598-022-05916-2

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