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arXiv · 2102.13320

Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG

B. Buonacorsi·F. Sfigakis·A. Shetty·M. C. Tam·H. S. Kim·S. R. Harrigan·F. Hohls·M. E. Reimer·Z. R. Wasilewski·J. Baugh
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Abstract

We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pumping in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $δ$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.

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B. Buonacorsi, F. Sfigakis, A. Shetty, M. C. Tam, H. S. Kim, S. R. Harrigan, F. Hohls, M. E. Reimer, Z. R. Wasilewski, J. Baugh. 2021-09-16. Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG. https://doi.org/10.1063/5.0062486

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