Search arXivSearch

arXiv · 2103.03360

Pure and Linear Frequency Converter Temporal Metasurface

Abstract

Metasurfaces are ultrathin structures which are constituted by an array of subwavelength scatterers with designable scattering responses. They have opened up unprecedented exciting opportunities for extraordinary wave engineering processes. On the other hand, frequency converters have drawn wide attention due to their vital applications in telecommunication systems, health care devices, radio astronomy, military radars and biological sensing systems. Here, we show that a spurious-free and linear frequency converter metasurface can be realized by leveraging unique properties of engineered transmissive temporal supercells. Such a metasurface is formed by time-modulated supercells; themselves are composed of temporal and static patch resonators and phase shifters. This represents the first frequency converter metasurface possessing large frequency conversion ratio with controllable frequency bands and transmission magnitude. In contrast to conventional nonlinear mixers, the proposed temporal frequency converter offers a linear response. In addition, by taking advantage of the proposed surface-interconnector-phaser-surface (SIPS) architecture, a spurious-free and linear frequency conversion is achievable, where all undesired mixing products are strongly suppressed. The proposed metasurface may be digitally controlled and programmed through a field programmable gate array. This makes the spurious-free and linear frequency converter metasurface a prominent solution for wireless and satellite telecommunication systems, as well as invisibility cloaks and radars. This study opens a way to realize more complicated and enhanced-efficiency spectrum-changing metasurface.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Sajjad Taravati, George V. Eleftheriades. 2021-03-04. Pure and Linear Frequency Converter Temporal Metasurface. https://doi.org/10.1103/physrevapplied.15.064011

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph