arXiv · 2103.03998
T centres in photonic silicon-on-insulator material
Abstract
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized $\lesssim$100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.
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E. R. MacQuarrie, C. Chartrand, D. B. Higginbottom, K. J. Morse, V. A. Karasyuk, S. Roorda, S. Simmons. 2021-03-06. T centres in photonic silicon-on-insulator material. https://arxiv.org/abs/2103.03998
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