arXiv · 2103.08841
Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell
Abstract
In this article, we demonstrate the design and simulation of a highly-efficient n-CdS/p-CIGS/p+-CGS dual heterojunction solar cell. The simulation was performed using SCAPS-1D software with reported experimental physical parameters. The simulation performance of our proposed design arises 47% with Voc=0.98 V, Jsc=59.94 mA/cm2 and FF=80.07%, respectively. The high short circuit current and hence the high efficiency is predominantly originated from the longer wavelength absorption of photon through a tail-states-assisted two-step upconversion in dual heterojunction (DH) and thus reaches the SQ detailed balance limit of DH solar cell.
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Shaikh Khaled Mostaque, Bipanko Kumar Mondal, Jaker Hossain. 2021-03-16. Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell. https://arxiv.org/abs/2103.08841
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