arXiv · 2109.14935
Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing
Abstract
The first report on ion transport through atomic sieves of atomically-thin 2D material is provided to solve critical limitations of electrochemical random-access memory (ECRAM) devices.
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Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Writam Banerjee, Myonghoon Kwak, Manoj Yadav, Hyunsang Hwang. 2021-09-30. Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing. https://doi.org/10.1002/smll.202103543
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