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arXiv · 2110.08366

Unity yield of deterministically positioned quantum dot single photon sources

Patrick Laferrière·Edith Yeung·Isabelle Miron·David B. Northeast·Sofiane Haffouz·Jean Lapointe·Marek Korkusinski·Philip J. Poole·Robin L. Williams·Dan Dalacu
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Abstract

We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as low as 0.6% with the distribution away from optimal values associated with the excitation of other charge complexes and re-excitation processes, respectively, inherent to the above-band excitation employed. Importantly, emission peak lineshapes have Lorentzian profiles indicating that linewidths are not limited by inhomogeneous broadening but rather pure dephasing, likely elastic carrier-phonon scattering due to a high phonon occupation. This work establishes nanowire-based devices as a viable route for the scalable fabrication of efficient single photon sources and provides a valuable resource for hybrid on-chip platforms currently being developed.

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Patrick Laferrière, Edith Yeung, Isabelle Miron, David B. Northeast, Sofiane Haffouz, Jean Lapointe, Marek Korkusinski, Philip J. Poole, Robin L. Williams, Dan Dalacu. 2021-10-15. Unity yield of deterministically positioned quantum dot single photon sources. https://arxiv.org/abs/2110.08366

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