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arXiv · 2202.05745

Response of a Commercial 0.25 um Thin-Film Silicon-on-Sapphire CMOS Technology to Total Ionizing Dose

Michael P. King·Datao Gong·Chonghan Liu·Tiankuan Liu·Annie C. Xiang·Jinbo Ye·Ronald D. Schrimpf·Robert A. Reed·Michael L. Alles·Daniel M. Fleetwood
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Abstract

The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change of less than 170 mV and leakage current change of less than 1 nA for individual nMOSFET and pMOSFET devices at a total dose of 100 krad(SiO2). The increase in power supply current at the circuit level was less than 5%, consistent with the small change in off-state transistor leakage current. The technology exhibits good characteristics for use in the electronics of the ATLAS experiment at the Large Hadron Collider.

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Michael P. King, Datao Gong, Chonghan Liu, Tiankuan Liu, Annie C. Xiang, Jinbo Ye, Ronald D. Schrimpf, Robert A. Reed, Michael L. Alles, Daniel M. Fleetwood. 2022-02-11. Response of a Commercial 0.25 um Thin-Film Silicon-on-Sapphire CMOS Technology to Total Ionizing Dose. https://doi.org/10.1088/1748-0221/5/11/c11021

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