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arXiv · 2202.06367

Information Density in Multi-Layer Resistive Memories

Susanna E. Rumsey·Stark C. Draper·Frank R. Kschischang
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Abstract

Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns of high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain information patterns cannot be recovered, as multiple low resistances in parallel make a high resistance indistinguishable from a low resistance. In this paper, a multi-layer device is considered, and the number of bits it can store is derived exactly and asymptotic bounds are developed. The information density of a series of isolated arrays with extreme aspect ratios is derived in the single- and multi-layer cases with and without peripheral selection circuitry. This density is shown to be non-zero in the limit, unlike that of the arrays with moderate aspect ratios previously considered. A simple encoding scheme that achieves capacity asymptotically is presented.

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Susanna E. Rumsey, Stark C. Draper, Frank R. Kschischang. 2022-02-13. Information Density in Multi-Layer Resistive Memories. https://doi.org/10.1109/tit.2020.3040255

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