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arXiv · 2204.13030

CMOS compatible multi-band plasmonic TE-pass polarizer

Nicolás Abadía·Md. Ghulam Saber·Frank Bello·Alireza Samani·Eslam El-Fiky·Yun Wang·John F. Donegan·David V. Plant
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Abstract

A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented metal will avoid the propagation of the TM mode, confined in the slot of the HPW, while the TE fundamental mode will pass. The TE mode is not affected by the metal segmentation since it is confined in the core of the HPW. The concept of the segmented metal can be exploited in a plasmonic circuit with HPWs as the connecting waveguides between parts of the circuit and in a silicon photonics circuit with strip or slab waveguides connecting the different parts of the circuit. Using 3D FDTD simulations, it is shown that for a length of 5.5 μm the polarization extinction ratios are better than 20 dB and the insertion losses are less than 1.7 dB over all the optical communication bands.

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Nicolás Abadía, Md. Ghulam Saber, Frank Bello, Alireza Samani, Eslam El-Fiky, Yun Wang, John F. Donegan, David V. Plant. 2022-07-15. CMOS compatible multi-band plasmonic TE-pass polarizer. https://doi.org/10.1364/oe.26.030292

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