High Photoluminescence Intensity of Heterostructure AlGaN-based DUV-LED through Uniform Carrier Distribution

Mohammad Amirul Hairol Aman; Faris Azim Ahmad Fajri; Ahmad Fakhrurrazi Ahmad Noorden; Mahdi Bahadoran; Suzairi Daud; Muhammad Zamzuri Abdul Kadir

arXiv · 2207.13273

High Photoluminescence Intensity of Heterostructure AlGaN-based DUV-LED through Uniform Carrier Distribution

Mohammad Amirul Hairol Aman·Faris Azim Ahmad Fajri·Ahmad Fakhrurrazi Ahmad Noorden·Mahdi Bahadoran·Suzairi Daud·Muhammad Zamzuri Abdul Kadir

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Abstract

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and photoluminescence (PL). Three different structures with different Al compositions are compared and analyzed. The radiative recombination of the DUV-LED is less efficient due to the imbalance of carrier distribution. The findings show that the uniform electrons and holes distribution significantly improve the radiative recombination for structure with a thin step-shaped quantum well (QW). The simulated structure emits a wavelength of 302.874 nm, categorized in the ultraviolet-B (UV-B) spectrum. Our results imply that carrier uniformity in QW is required to enhance the light intensity of DUV-LED. Remarkably, the uniformity enhances the PL intensity drastically, at least 300% higher than the other structures.

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Mohammad Amirul Hairol Aman, Faris Azim Ahmad Fajri, Ahmad Fakhrurrazi Ahmad Noorden, Mahdi Bahadoran, Suzairi Daud, Muhammad Zamzuri Abdul Kadir. 2022-07-27. High Photoluminescence Intensity of Heterostructure AlGaN-based DUV-LED through Uniform Carrier Distribution. https://arxiv.org/abs/2207.13273

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