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arXiv · 2208.01798

Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime

Shoichi Sato·Masaaki Tanaka·Ryosho Nakane
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Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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Shoichi Sato, Masaaki Tanaka, Ryosho Nakane. 2022-08-03. Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime. https://arxiv.org/abs/2208.01798

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